林時彥

Shih-Yen Lin

Education

  • Ph.D. in Electrical Engineering, National Taiwan University (2001)

Research Fields

  • Material Growth and Device Applications of 2-D Crystals
  • Molecular Beam Epitaxy, Optoelectronic Devices

Experience

  • Research Fellow, Research Center for Applied Sciences, Academia Sinica (2016.5-)
  • Adjunct Professor, Graduate Institute of Electronics Engineering, National Taiwan University (2016.8-)
  • Adjunct Professor, Department of Electrical Engineering, National Cheng Kung University (2017.2-)
  • Adjunct Professor, Department of Materials Science and Engineering, National Dong Hwa University (2016.8-)
  • Outstanding Young Scholar Research Project, NSC (國科會優秀年輕學者研究計畫 2013.8-2016.7)
  • Senior Member, IEEE (2012.8-)
  • 100 年度優秀青年工程師, Outstanding Young Engineer (2011, 中國工程師學會, Chinese Institute of Engineers)
  • Scholarship for Visiting Scientist from Pan Wen Yuan Foundation (2005)

Patents:

“Elemental 2D Materials Grown on Molybdenum Disulfides for Device Applications” US patent 11121214 (September 14, 2021 - September 13, 2041)
“Selective Growth of Antimonene on MoS2 Surfaces for Device Applications”, US patent 10872973 (December 22, 2020 - December 21, 2040).
“Planar 2D Crystal Hetero-structure Quantum Wells for Device Applications”, US patent 10784351 (September 22, 2020 - September 21, 2040).
"Fermi Level Tuning of Graphene Transistors by Using In-plane Gates", China patent ZL201510245423.4 (January 14, 2020 - January 13, 2040).
“Single-crystal Antimonene Prepared by MBE for Device Applications”, US patent 10541132 (Date of patent: January 21, 2020).
“Controllable Multi-Layer MoS2 Fabricated by Repeating Chemical Vapor Deposition Growth Procedures and Its Applications in Transistors”, US patent 10403744 (Date of patent: September 3, 2019).
“Controllable Multi-Layer MoS2 Fabricated by Repeating Chemical Vapor Deposition Growth Procedures and Its Applications in Transistors”, Korea patent 1983876 (May 23, 2019- May 22, 2039).
“Layered Etching and Following Re-sulfurization of Molybdenum Disulfide”, US patent 10269564 (Date of patent: April 23, 2019).
“Device Performance Enhancement and Fermi Level Tuning of MoS2 Transistors by Using Post-Growth Low-Power Oxygen Plasma Treatment”, US patent under process US patent 10147603 (Date of patent: December 4, 2018)
“Transition Metal Dichalcogenide Hetero-structures Fabricated by Using Metal Deposition and Following Sulfurization for Device Applications”, US patent 9899537 (Date of patent: February 20, 2018)
“Directly Grown Graphene on Sapphire Substrates – The establishment of 2-D Crystal Hetero-structures”, US patent 9859115 (Date of patent: January 2, 2018)
“Transition Metal Dichalcogenide Transistors with Nanometer-Size Channel Lengths Fabricated on 2-D Crystal Hetero-structures”, US patent 9577049 (Date of patent: February 21, 2017).
“Fermi Level Tuning of Graphene Transistors by Using In-plane Gates”, US and China patents, U.S. patent 9525072 B2 (Date of patent: December 20, 2016)
“藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法”, 臺灣專利發明第 I 526559 號 (專利權期間: 2016.3.21-2032.4.5)
“石墨烯薄膜及電晶體的石墨烯通道之製備方法”, 臺灣專利發明第 I 503276 號 (專利權期間: 2015.10.11-2033.3.12)
“METHOD FOR MANUFACTURING GRAPHENE FILM AND GRAPHENE CHANNEL OF TRANSISTOR”, U.S. patent 9029190 B2 (May 12, 2015)
“具有砷化銦鎵覆蓋層之長波長量子點紅外線偵測器”, 發明第I458576 號臺灣專利 (專利權期間: 2014.11.1-2029.9.24)
“量子點及量子井混合模式紅外線偵測器裝置及其形成方法”, 臺灣專利 (發明I400813號) (專利權期間: 2013.7.1-2028.8.25)
“Vertical Organic Transistor and Method of Fabricating the Same,” U.S. Patent 7560728.
“垂直有機電晶體及其製造方法”, 臺灣專利 (發明I299904號)
“量子點紅外線偵測器”, 臺灣專利 (發明I269355 號) (專利權期間: 2006.12.21-2024.12.28).
“高溫操作量子點紅外線偵檢器結構設計製作 (Structure Design and Fabrication of High-Temperature Operated Quantum Dot Infrared Photodetector)” 臺灣專利 (發明第480591號)

Publications

Interfacial Engineering of Quantum Dots–Metal–Organic Framework Composite Toward Efficient Charge Transport for a Short-Wave Infrared Photodetector
Po-Yu Huang, Yong-Yun Zhang, Po-Cheng Tsai, Ren-Jei Chung, Yi-Ting Tsai, Man-kit Leung, (Shih-Yen Lin)*, and Mu-Huai Fang*
    Year:2023-11
ADVANCED OPTICAL MATERIALS
Flexible Double-Side Red Emission Quantum Dot Light-Emitting Diodes: van der Waals Epitaxy of Nanometer-thick Metal Transparent Electrodes on 2D Material Surfaces
Shih-Chia Huang, Che-Jia Chang, Yu-Hsiang Lin, (Shih-Yen Lin), and Chun-Yuan Huang*
    Year:2023-12
ACS APPLIED NANO MATERIALS
Dynamical Characteristics of AC-Driven Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light- Emitting Device
James Singh Konthoujam, Yen-Shou Lin, Ya-Hui Chang, Hsiang-Ting Lin, Chiao-Yun Chang, Yu-Wei Zhang, (Shih-Yen Lin), Hao-Chung Kuo and Min-Hsiung Shih*
    Year:2023-11
Discover Nano
Molybdenum Disulfide Transistors Bearing All-2D-Material Interfaces: Device Performance Optimization and Influences of Interfaces and Passivation Layers
Che-Jia Chang, Bo-Hao Chen, Tzu-Hsuan Chang, Shoou-Jinn Chang, and (Shih-Yen Lin)*
    Year:2023-11
ACS APPLIED ELECTRONIC MATERIALS
Enhanced Modulation Bandwidth by Integrating 2-D Semiconductor and Quantum Dots for Visible Light Communication
James Singh Konthoujam, Yen-Shou Lin, Yi-Hua Pai, Chiao-Yun Chang, Yu-Wei Zhang, (Shih-Yen Lin), Hao-Chung Kuo, Min-Hsiung Shih*
    Year:2023-07
Advanced Photonics Research
In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers
Po-Cheng Tsai, Chun-Wei Huang, Shoou-Jinn Chang, Shu-Wei Chang* and (Shih-Yen Lin)*
    Year:2023-06
SCIENTIFIC REPORTS
Persistent Charge Storage and Memory Operation of Top Gate Transistors Solely Based on Two-dimensional Molybdenum Disulfide
Po-Cheng Tsai, Coung-Ru Yan, Shoou-Jinn Chang, Shu-Wei Chang and (Shih-Yen Lin)*
    Year:2023-05
NANOTECHNOLOGY
AC-driven multicolor electroluminescence from a hybrid WSe2 monolayer/AlGaInP quantum well light-emitting device
Ya-Hui Chang, Yen-Shou Lin, Konthoujam James Singh, Hsiang-Ting Lin, Chiao-Yun Chang, Zheng-Zhe Chen, Yu-Wei Zhang, (Shih-Yen Lin), Hao-Chung Kuo and Min-Hsiung Shih*
    Year:2023-04
NANOSCALE
Temporally probing the thermal phonon and charge transfer induced out-of-plane acoustical displacement of monolayer and bi-layer MoS2/GaN heterojunction
Peng-Jui Wang, Che-Jia Chang, (Shih-Yen Lin), Jinn-Kong Sheu, Chi-Kuang Sun*
    Year:2023-04
PHOTOACOUSTICS
Boost Lasing Performances of 2D Semiconductor in a Hybrid Tungsten Diselenide Monolayer/Cadmium Selenide Quantum Dots Microcavity Laser
Hsiang-Ting Lin, Chiao-Yun Chang, Cheng-Li Yu, Andrew Boyi Lee, Shih-Yu Gu, Li-Syuan Lu, Yu-Wei Zhang, (Shih-Yen Lin), Wen-Hao Chang, Shu-Wei Chang and Min-Hsiung Shih*
 [ DOI here ]    Year:2022-10
ADVANCED OPTICAL MATERIALS
Revealing the interlayer van der Waals coupling of bi-layer and tri-layer MoS2 using terahertz coherent phonon spectroscopy
Peng-Jui Wang, Po-Cheng Tsai, Zih-Sian Yang, (Shih-Yen Lin), Chi-Kuang Sun*
 [ DOI here ]    Year:2022-10
Photoacoustics
The Influence of Contact Metals on Epitaxially Grown Molybdenum Disulfide for Electrical and Optical Device Applications
Po-Cheng Tsai, Coung-Ru Yan, Shoou-Jinn Chang, and (Shih-Yen Lin)*
 [ DOI here ]    Year:2022-10
NANOTECHNOLOGY
Van der Waals Epitaxy of Thin Gold Films on 2D Material Surfaces for Transparent Electrodes: All-Solution-Processed Quantum Dot Light-Emitting Diodes on Flexible Substrates
Hsiang-Yen Liu, Wei-Ya Su, Che-Jia Chang, (Shih-Yen Lin), and Chun-Yuan Huang*
 [ DOI here ]    Year:2022-08
ACS APPLIED MATERIALS & INTERFACES
Layered Graphene Growth Directly on Sapphire Substrates for Applications
Che-Jia Chang, Po-Cheng Tsai, Wei-Ya Su, Chun-Yuan Huang, Po-Tsung Lee, and (Shih-Yen Lin)*
 [ DOI here ]    Year:2022-04
ACS Omega
Nanometer‑thick Copper Films with Low Resistivity Grown on 2D Material Surfaces
Yu‑Wei Liu, Dun‑Jie Zhang, Po‑Cheng Tsai, Chen‑Tu Chiang, Wei‑Chen Tu and (Shih‑Yen Lin)*
 [ DOI here ]    Year:2022-02
SCIENTIFIC REPORTS
Top-gate Transistors Fabricated on Epitaxially Grown Molybdenum Disulfide and Graphene Hetero-structures
Po-Cheng Tsai, Hon-Chin Huang, Chen-Tu Chiang, Chao-Hsin Wu, and( Shih-Yen Lin)*
 [ DOI here ]    Year:2021-11
APPLIED PHYSICS EXPRESS
Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS2/Graphene Heterostructures for Memory Device Applications
Po-Cheng Tsai, Chun-Wei Huang, Shoou-Jinn Chang, Shu-Wei Chang*, and (Shih-Yen Lin)*
 [ DOI here ]    Year:2021-09
ACS APPLIED MATERIALS & INTERFACES
MoS2 with Stable Photoluminescence Enhancement under Stretching via Plasmonic Surface Lattice Resonance
Yen-Ju Chiang, Tsan-Wen Lu*, Pin-Ruei Huang, (Shih-Yen Lin) and Po-Tsung Lee*
 [ DOI here ]    Year:2021-06
NANOMATERIALS
Large Surface Photovoltage of WS2/MoS2 and MoS2/WS2 Vertical Hetero-bilayers
Bora Kim, Jayeong Kim, Po-Cheng Tsai, Hyeji Choi, Seokhyun Yoon, (Shih-Yen Lin), and Dong-Wook Kim*
 [ DOI here ]    Year:2021-05
ACS Applied Electronic Materials
Transfer current in p-type graphene/MoS2 heterostructures
Khoe Van Nguyen, (Shih-Yen Lin), Yia-Chung Chang*
    Year:2021-01
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Highly Conductive Nanometer-Thick Gold Films Grown on Molybdenum Disulfide Surfaces for Interconnect Applications
Yu-Wei Zhang, Bo-Yu Wu, Kuan-Chao Chen, Chao-Hsin Wu, and (Shih-Yen Lin)*
    Year:2020-09
SCIENTIFIC REPORTS
Luminescence Enhancement and Dual-Color Emission of Stacked Mono-layer 2D Materials
Po-Cheng Tsai, Hon-Chin Huang, Chun-Wei Huang, Shoou-Jinn Chang, and (Shih-Yen Lin)*
    Year:2020-06
NANOTECHNOLOGY
Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates
Bora Kim, Jayeong Kim, Po-Cheng Tsai, Soyeong Kwon, Eunah Kim, Seokhyun Yoon, (Shih-Yen Lin), and Dong-Wook Kim*
    Year:2020-05
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Ultrafast Exciton Dynamics in Scalable Monolayer MoS2 Synthesized by Metal Sulfurization
Hsu-Sheng Tsai, Yung-Hung Huang, Po-Cheng Tsai, Yi-Jia Chen, Hyeyoung Ahn, (Shih-Yen Lin), Yu-Jung Lu*
    Year:2020-05
ACS OMEGA
Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures
Yu-Wei Zhang, Jun-Yan Li, Chao-Hsin Wu, Chiao-Yun Chang, Shu-Wei Chang, Min-Hsiung Shih and (Shih-Yen Lin)*
    Year:2020-04
SCIENTIFIC REPORTS
Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
Hsiang-Ting Lin, Kung-Shu Hsu, Chih-Chi Chang, Wei-Hsun Lin, (Shih-Yen Lin), Shu-Wei Chang, Yia-Chung Chang and Min-Hsiung Shih*
    Year:2020-03
SCIENTIFIC REPORTS
Van der Waals Epitaxy of Large-area and Single-crystalline Gold Films on MoS2 for Low-Contact-Resistance 2D-3D Interfaces
Kuan-Chao Chen, Syuan-Miao Lai, Bo-Yu Wu, Chi Chen*, and (Shih-Yen Lin)*
    Year:2020-03
ACS Applied Nano Materials
Multi-layer elemental 2D materials: antimonene, germanene and stanene grown directly on molybdenum disulfides
Kuan-Chao Chen, Lun-Ming Lee, Hsuan-An Chen, Hsu Sun, Cheng-Lun Wu, Hsin-An Chen, Kuan-Bo Lin, Yen-Chun Tseng, Chao-Cheng Kaun, Chun-Wei Pao, and (Shih-Yen Lin)*
    Year:2019-09
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
A Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitter on a Three-Dimensional Substrate
Chiao-Yun Chang, Hsiang-Ting Lin, Ming-Sheng Lai, Cheng-Li Yu, Chong-Rong Wu, He-Chun Chou, (Shih-Yen Lin), Chi Chen, Min-Hsiung Shih*
    Year:2019-06
ACS APPLIED MATERIALS & INTERFACES
The Atomic Layer Etching Mechanisms of Molybdenum Disulfides by Using Oxygen Plasma
Kuan-Chao Chen, Chia-Wei Liu, Chi Chen* and (Shih-Yen Lin)*
    Year:2019-03
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer $MoS_2$ on Three-layer $W_xMo_yS_2$
Kuan-Chao Chen, Cing-Yu Jian, Yi-Jia Chen, Si-Chen Lee, Shu-Wei Chang*, and (Shih-Yen Lin)*
    Year:2018-07
ACS APPLIED MATERIALS & INTERFACES
Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure
Hsuan-An Chen, Hsu Sun, Chong-Rong Wu, Yu-Xuan Wang, Po-Hsiang Lee, Chun-Wei Pao, and (Shih-Yen Lin)*
    Year:2018-05
ACS APPLIED MATERIALS & INTERFACES
Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings
Chi-Ti Hsieh, (Shih-Yen Lin), and Shu-Wei Chang*
    Year:2018-03
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Scalable MoS2/Graphene Hetero-structures Grown Epitaxially on Sapphire Substrates for Phototransistor Applications
Hsuan-An Chen, Wei-Chan Chen, Hsu Sun, Chien-Chung Lin and (Shih-Yen Lin)*
    Year:2018-01
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Preparation of Large-Area Vertical 2D Crystal Hetero-Structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Chong-Rong Wu, Tung-Wei Chu, Kuan-Chao Chen, and (Shih-Yen Lin)*
 [ DOI here ]    Year:2017-11-28
Jove-Journal of Visualized Experiments
Type-II Superlattice Infrared Photodetectors with Graphene Transparent Electrodes
Hsuan-An Chen, Hsuan-Yu Chen, Wei-Chan Chen, and (Shih-Yen Lin)*
    Year:2017-10
IEEE PHOTONICS TECHNOLOGY LETTERS
Type-I to Type-II Transformation of Hybrid Quantum Nanostructures
Hsuan-An Chen, Wei-Hsun Lin, Chiao-Yun Chang, Shu-Wei Chang, Min-Hsiung Shih, and (Shih-Yen Lin)*
    Year:2017-09
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Atomic Layer Etchings of Transition Metal Dichalcogenides with Post Healing Procedures: Equivalent Selective Etching of 2D Crystal Hetero-structures
Kuan-Chao Chen, Tung-Wei Chu, Chong-Rong Wu, Si-Chen Lee and (Shih-Yen Lin)*
    Year:2017-06
2D MATERIALS
Layer number controllability of transition-metal dichalcogenides and the establishment of hetero-structures by using sulfurization of thin transition metal films
Chen Kuan-Chao, Chu Tung-Wei, Wu Chong-Rong, Lee Si-Chen, (Lin Shih-Yen)*
 [ DOI here ]    Year:2017-02
JOURNAL OF PHYSICS D-APPLIED PHYSICS
The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment
Chong-Rong Wu, Xiang-Rui Chang, Chao-Hsin Wu, and (Shih-Yen Lin)*
    Year:2017-02
SCIENTIFIC REPORTS
Dual-Cut Graphene Transistors with Constant-current Regions Fabricated by Using the Atomic Force Microscope Anode Oxidation
Chong-Rong Wu, Kun Peng Dou, Cheng-Hung Wang, Chung-En Chang, Chao-Cheng Kaun, Chao-Hsin Wu and (Shih-Yen Lin)*
    Year:2017-01
JAPANESE JOURNAL OF APPLIED PHYSICS
Luminescence Enhancement and Enlarged Dirac Point Shift of $MoS_2$/Graphene Hetero-structure Photodetectors with Post-Growth Annealing Treatment
Chong-Rong Wu, Kun-Cheng Liao, Chao-Hsin Wu, and (Shih-Yen Lin)*
    Year:2017-01
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth
Chong-Rong Wu, Xiang-Rui Chang, Tung-Wei Chu, Hsuan-An Chen, Chao-Hsin Wu, and (Shih-Yen Lin)*
    Year:2016-11
NANO LETTERS
Enhancement of field-effect mobility in molybdenum-disulfide transistor through the treatment of low-power oxygen plasma
Kuan-Chao Chen, Chong-Rong Wu, Xiang-Rui Chang, Shu-Wei Chang, Si-Chen Lee, and (Shih-Yen Lin)*
    Year:2016-09
JAPANESE JOURNAL OF APPLIED PHYSICS
Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas
Hsuan-An Chen, Tung-Chuan Shih, Hsuan-You Chen and (Shih-Yen Lin)*
    Year:2016-03
JAPANESE JOURNAL OF APPLIED PHYSICS
An InN-Based Heterojunction Photodetector with Extended Infrared Response
Lung-Hsing Hsu, Chien-Ting Kuo, Jhih-Kai Huang, Shun-Chieh Hsu, Hsin-Ying Lee, Hao-Chung Kuo, Po-Tsung Lee, Yu-Lin Tsai, Yi-Chia Hwang, Chen-Feng Su, Jr-Hau He, (Shih-Yen Lin), Yuh-Jen Cheng, and Chien-Chung Lin*
    Year:2015-11
OPTICS EXPRESS
Multilayer $MoS_2$ Prepared by One-time and Repeated Chemical Vapor Depositions: Anomalous Raman Shifts and Transistors with High ON/OFF Ratio
Chong-Rong Wu, Xiang-Rui Chang, Shu-Wei Chang, Chung-En Chang, Chao-Hsin Wu, and (Shih-Yen Lin)*
    Year:2015-11
JOURNAL OF PHYSICS D-APPLIED PHYSICS
GaSb/GaAs Quantum Dots and Rings Grown under Periodical Growth Mode by Using Molecular Beam Epitaxy
Hsuan-An Chen, Tung- Chuan Shih, Shiang-Feng Tang, Ping-Kuo Weng, Yau-Tang Gau, and (Shih-Yen Lin)*
    Year:2015-09
JOURNAL OF CRYSTAL GROWTH
Transferring-Free and Large-Area Graphitic Carbon Film Growth by Using Molecular Beam Epitaxy at Low Growth Temperature
Meng-Yu Lin, Cheng-Hung Wang, Chun-Wei Pao, and (Shih-Yen Lin)*
    Year:2015-09
JOURNAL OF CRYSTAL GROWTH
1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy
Cheng-Han Wu, Hsuan-An Chen, (Shih-Yen Lin) and Chao-Hsin Wu*
    Year:2015-08
OPTICS LETTERS
Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity
Kung-Shu Hsu, Wei-Chun Hung, Chih-Chi Chang, Wei-Hsun Lin, Min-Hsiung Shih*, Po-Tsung Lee, (Shih-Yen Lin), Shu-Wei Chang, and Yia-Chung Chang
    Year:2015-08
APPLIED PHYSICS LETTERS
Passivated Graphene Transistors Fabricated on Millimeter-sized Single-Crystal Graphene Film Prepared with Chemical Vapor Deposition
Meng-Yu Lin, Cheng-Hung Wang, Shu-Wei Chang, Si-Chen Lee, and (Shih-Yen Lin)*
    Year:2015-07
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Long-Wavelength In-plane Gate InAs Quantum-Dot Photo-Transistors
Hsuan-An Chen, Tung- Chuan Shih and (Shih-Yen Lin)*
    Year:2015-02
IEEE PHOTONICS TECHNOLOGY LETTERS
Toward Epitaxially Grown Two-Dimensional Crystal Hetero-Structures: Single and Double MoS2/Graphene Hetero-Structures by Chemical Vapor Depositions
Meng-Yu Lin, Chung-En Chang, Cheng-Hung Wang, Chen-Fung Su, Chi Chen, Si-Chen Lee, and (Shih-Yen Lin)*
    Year:2014-08
APPLIED PHYSICS LETTERS
The Growth Mechanisms of Graphene Directly on Sapphire Substrates by Using the Chemical Vapor Deposition
Meng-Yu Lin, Chen-Fung Su, Si-Chen Lee, and (Shih-Yen Lin)*
    Year:2014-06
JOURNAL OF APPLIED PHYSICS
Field Effect of In-plane Gates with Different Gap Sizes on the Fermi Level Tuning of Graphene Channels
Meng-Yu Lin, Yen-Hao Chen, Cheng-Hung Wang, Chen-Fung Su, Shu-Wei Chang*, Si-Chen Lee, and (Shih-Yen Lin)*
    Year:2014-05
APPLIED PHYSICS LETTERS
Type II GaSb quantum ring solar cells under concentrated sunlight
Che-Pin Tsai, Shun-Chieh Hsu, (Shih-Yen Lin), Ching-Wen Chang, Li-Wei Tu, Kun-Cheng Chen, Tsong-Sheng Lay, and Chien-Chung Lin*
    Year:2014-03
OPTICS EXPRESS
Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips
Meng-Yu Lin, Yen-Hao Chen, Chen-Fung Su, Shu-Wei Chang, Si-Chen Lee, and (Shih-Yen Lin)*
    Year:2014-01
APPLIED PHYSICS LETTERS
The operation principle of the well in quantum dot stack infrared photodetector
Jheng-Han Lee, Zong-Ming Wu, Yu-Min Liao, Yuh-Renn Wu, (Shih-Yen Lin), and Si-Chen Lee*
 [ DOI here ]    Year:2013-12
JOURNAL OF APPLIED PHYSICS
Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
Yu-An Liao, Yi-Kai Chao, Shu-Wei Chang*, Wen-Hao Chang, Jen-Inn Chyi, and (Shih-Yen Lin)*
 [ DOI here ]    Year:2013-10
APPLIED PHYSICS LETTERS
Graphene Films Grown at Low Substrate Temperature and The Growth Model by Using MBE Technique
Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Si-Chen Lee and (Shih-Yen Lin)*
    Year:2013-09
JOURNAL OF CRYSTAL GROWTH
Long-Wavelength Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum-Rings at Room Temperature
Wei-Hsun Lin, Kai-Wei Wang, (Shih-Yen Lin)* and Meng-Chyi Wu
    Year:2013-09
JOURNAL OF CRYSTAL GROWTH
Temperature-Dependent Photoluminescence and Carrier Dynamics of Standard and Coupled Type-II GaSb/GaAs Quantum Rings
Wei-Hsun Lin, Kai-Wei Wang, (Shih-Yen Lin)* and Meng-Chyi Wu
    Year:2013-09
JOURNAL OF CRYSTAL GROWTH
The Formation Mechanisms and Optical Characteristics of GaSb Quantum Rings
Wei-Hsun Lin, Kai-Wei Wang, Yu-An Liao, Chun-Wei Pao and (Shih-Yen Lin)*
    Year:2013-08
JOURNAL OF APPLIED PHYSICS
In-Plane Gate Transistors for Photodetector Applications
Yu-An Liao, Wei-Hsun Lin, Yi-Kai Chao, Wen-Hao Chang, Jen-Inn Chyi, and (Shih-Yen Lin*)
    Year:2013-06
IEEE ELECTRON DEVICE LETTERS
800meV localization energy in GaSb/GaAs/$Al_0_._3$$Ga_0_._7As$ quantum dots
. Nowozin, L. Bonato, Hogner, A. Wiengarten, D. Bimberg, Wei-Hsun Lin, (Shih-Yen Lin), C. J. Reyner, Baolai L. Liang, and D. L. Huffaker
    Year:2013-02
APPLIED PHYSICS LETTERS
Improved 1.3 $\\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
Wei-Hsun Lin, Kai-Wei Wang, (Shih-Yen Lin)* and Meng-Chyi Wu
    Year:2013-01
IEEE PHOTONICS TECHNOLOGY LETTERS
Low-temperature grown graphene films by using molecular beam epitaxy
Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Te-Huan Liu, Chun-Wei Pao, Chien-Cheng Chang, Si-Chen Lee and (Shih-Yen Lin)*
    Year:2012-11
APPLIED PHYSICS LETTERS
Broadband InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetector with Bi-Modal Dot Height Distributions
Wei-Hsun Lin and (Shih-Yen Lin)*
    Year:2012-08
JOURNAL OF APPLIED PHYSICS
In-Plane Gate Transistors with 40 $\\mu$m Wide Channel Width
ung-Hsun Chung, Wei-Hsun Lin, Yi-Kai Chao, Shu-Wei Chang, and (Shih-Yen Lin)*
    Year:2012-08
IEEE ELECTRON DEVICE LETTERS
Performance Improvement of AlGaAs/GaAs QWIP by NH3 Plasma Treatment
J. H. Lee, C. Y. Chang, C. H. Li, (S. Y. Lin) and S. C. Lee*
    Year:2012-07
IEEE JOURNAL OF QUANTUM ELECTRONICS
Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
Wei-Hsun Lin, Meng-Yu Lin, Shung-Yi Wu, and (Shih-Yen Lin)*
    Year:2012-07
IEEE PHOTONICS TECHNOLOGY LETTERS
Type-II GaSb/GaAs Coupled Quantum Rings: Room-Temperature Luminescence Enhancement and Recombination Lifetime Elongation for Device Applications
Wei-Hsun Lin, Kai-Wei Wang, Shu-Wei Chang, Min-Hsiung Shih and (Shih-Yen Lin)*
    Year:2012-07
APPLIED PHYSICS LETTERS
Painted Graphitic Carbon Films Formed underneath Ni Templates
Meng-Yu Lin, Yung-Shuan Sheng, (Shih-Yen Lin)*, and Si-Chen Lee
    Year:2012-01
Physica Status Solidi C
The Influence of Background As on GaSb/GaAs Quantum Dots and Its Application in Infrared Photodetectors
Wei-Hsun Lin, Chi-Che Tseng, Shung-Yi Wu, Meng-Hsun Wu, (Shih-Yen Lin)*, and Meng-Chyi Wu
    Year:2012-01
Physica Status Solidi C
Graphitic Carbon Film Formation under Ni Templates by Radiofrequency Sputtering for Transparent Electrode Applications
Meng-Yu Lin, Yung-Shuan Sheng, Shu-Han Chen, Ching-Yuan Su, Lain-Jong Li and (Shih-Yen Lin)*
    Year:2011-11
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
Ching-Yuan Su, Ang-Yu Lu, Chih-Yu Wu, Yi-Te Li, Keng-Ku Liu, Wenjing Zhang, (Shih-Yen Lin), Zheng-Yu Juang, Yuan-Liang Zhong, Fu-Rong Chen, and Lain-Jong Li*
    Year:2011-08
NANO LETTERS
The Transition Mechanisms of Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diodes
Chi-Che Tseng, Wei-Hsun Lin, Shu-Cheng Mai, Shung-Yi Wu, Shu-Han Chen, and (Shih-Yen Lin)*
    Year:2011-05
JOURNAL OF CRYSTAL GROWTH
Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors for Multi-color Detection
Wei-Hsun Lin, (Shih-Yen Lin)*, Chi-Che Tseng, Shu-Yen Kung, Kuang-Ping Chao, Shu-Cheng Mai and Meng-Chyi Wu
    Year:2011-05
INFRARED PHYSICS & TECHNOLOGY
The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
Chi-Che Tseng, Shu-Cheng Mai, Wei-Hsun Lin, Shung-Yi Wu, Bang-Ying Yu, Shu-Han Chen, (Shih-Yen Lin)*, Jing-Jong Shyue and Meng-Chyi Wu
    Year:2011-03
IEEE JOURNAL OF QUANTUM ELECTRONICS
Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots
K. S. Hsu, T. T. Chiu, Wei-Hsun Lin, K. L. Chen, M. H. Shih*, (Shih-Yen Lin), and Yia-Chung Chang
    Year:2011-02
APPLIED PHYSICS LETTERS
High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors
Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Cheng Mai, Shu-Yen Kung, Shug-Yi Wu, (Shih-Yen Lin)*
    Year:2011-01
IEEE PHOTONICS TECHNOLOGY LETTERS
In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation
Tung-Hsun Chung, Shu-Han Chen, Wen-Hsuan Liao, and (Shih-Yen Lin)*
    Year:2010-11
IEEE ELECTRON DEVICE LETTERS
The Fabrication of Nanomesas and Nanometal Contacts by Using Atomic Force Microscopy Lithography
Tung-Hsun Chung, Wen-Hsuan Liao, and (Shih-Yen Lin)*
    Year:2010-11
Journal of applied physics
Broadband Quantum-Dot Infrared Photodetector
Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Yen Kung, (Shih-Yen Lin)*, and Meng-Chyi Wu
    Year:2010-07
IEEE PHOTONICS TECHNOLOGY LETTERS
Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates
(Shih-Yen Lin)*, Chi-Che Tseng, Tung-Hsun Chung, Wen-Hsuan Liao, Shu-Han Chen and Jen-Inn Chyi
    Year:2010-07
NANOTECHNOLOGY
The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, (Shih-Yen Lin)* and Meng-Chyi Wu
    Year:2010-05
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Two-color Qauntum Dot Infrared Photodetectors With Periodic Cross Metal Hole Array Contact
Jheng-Han Lee, Yi-Tsung Chang, Chao-Ju Huang, (Shih-Yen Lin) and Si-Chen Lee*
    Year:2010-04
IEEE PHOTONICS TECHNOLOGY LETTERS
Room-Temperature Operation Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diode
(Shih-Yen Lin)*, Chi-Che Tseng, Wei-Hsun Lin, Shu-Cheng Mai, Shung-Yi Wu, Shu-Han Chen and Jen-Inn Chyi
    Year:2010-03
APPLIED PHYSICS LETTERS
Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Cheng Mai, (Shih-Yen Lin)*, and Meng-Chyi Wu
    Year:2010-02
IEEE PHOTONICS TECHNOLOGY LETTERS
Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment
Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, \"Shih-Yen Lin\"*, and Meng-Chyi Wu
    Year:2009-11
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors
\"Shih-Yen Lin\"*, Shu-Ting Chou, Wei-Hsun Lin
    Year:2009-11
Infrared Physics & Technology
InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, \"Shih-Yen Lin\"*, and Meng-Chyi Wu
    Year:2009-09
IEEE PHOTONICS TECHNOLOGY LETTERS
The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
Wei-Hsun Lin, Kuang-Ping Chao, Chi-Che Tseng, Shu-Chen Mai, \"Shih-Yen Lin\"* and Meng-Chyi Wu
    Year:2009-09
JOURNAL OF APPLIED PHYSICS
The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors
\"Shih-Yen Lin*\", Shu-Ting Chou, Wei-Hsun Lin
    Year:2009-09
INFRARED PHYSICS & TECHNOLOGY
Voltage-Tunable Two-Color Quantum-Dot Infrared Photodetectors
\"Shih-Yen Lin\"*, Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, and Shu-Cheng Mai
    Year:2009-09
APPLIED PHYSICS LETTERS
High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
Yung-Sheng Wang, Shoou-Jinn Chang, Shu-Ting Chou and \"Shih-Yen Lin\"* and Wei Lin
    Year:2009-05
JAPANESE JOURNAL OF APPLIED PHYSICS
The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors
S. T. Chou, \"S. Y. Lin\"*, Bonnie Yu, J. J. Shyue, C. C. Tseng, C. N. Chen, M. C. Wu and W. Lin
    Year:2009-01
Thin Solid Films
The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector
Chi-Che Tseng, Shu-Ting Chou, \"Shih-Yen Lin\"*, Cheng-Nan Chen, Wei-Hsun Lin, Yi-Hao Chen, Tung-Hsun Chung, and Meng-Chyi Wu
    Year:2008-11
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors
Shu-Ting Chou, \"Shih-Yen Lin\"*, Cheng-Nan Chen, Chi-Che Tseng, Yi-Hao Chen, and Meng-Chyi Wu
    Year:2008-09
IEEE PHOTONICS TECHNOLOGY LETTERS
Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots
Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, \"Shih-Yen Lin\"*, Pei-Chin Chiu, Jen-Inn Chyi and Meng-Chyi Wu
    Year:2008-07
IEEE PHOTONICS TECHNOLOGY LETTERS
Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection
Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, \"Shih-Yen Lin\"*, and Meng-Chyi Wu
    Year:2008-06
Applied Physics Letters
Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots
Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, \"Shih-Yen Lin\"* and Meng-Chyi Wu
    Year:2008-05
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Tailoring detection wavelength of InGaAs quantum wire infrared photodetector
C. L. Tsai, K. Y. Cheng, S. T. Chou, \"S. Y. Lin\", C. Xu and K. C. Hsieh
    Year:2008-05
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Self-ordered InGaAs Quantum Dots Grown at Low Growth Rates
Chun-Yuan Huang, Meng-Chyi Wu*, Jeng-Jung Shen, and \"Shih-Yen Lin\"
    Year:2008-02
JOURNAL OF APPLIED PHYSICS
Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing
Chun-Yuan Huang, Tzu-Min Ou, Shu-Ting Chou, Meng-Chyi Wu*, \"Shih-Yen Lin\" and Jim-Yong Chi
    Year:2007-11
IEEE TRANSACTIONS ON NANOTECHNOLOGY
InGaAs quantum wire infrared photodetector
C. L. Tsai, K. Y. Cheng*, S. T. Chou and \"S. Y. Lin\"
    Year:2007-10
Applied Physics Letters
Pentacene-Based Planar and Vertical Type Organic Thin-Film Transistor
Chuan-Yi Yang, Shiau-Shin Cheng, Tzu-Min Ou, Meng-Chyi Wu, Chun-Hung Wu, Che-Hsi Chao, \"Shih-Yen Lin\"* and Yi-Jen Chan
    Year:2007-07
IEEE TRANSACTIONS ON ELECTRON DEVICES
Temperature-Insensitive Detectivity of 5-pair InAs/GaAs Quantum-Dot Infrared Photodetectors with Asymmetric Device Structure
Shu-Ting Chou, Shang-Fu Chen, \"Shih-Yen Lin\"*, Meng-Chyi Wu, Jing-Mei Wang
    Year:2007-06
Journal of Crystal Growth
The Influence of InAs Coverage on the Performances Self-Assembled InGaAs Quantum Rings
Chun-Yuan Huang, Meng-Chyi Wu*, \"Shih-Yen Lin\", Jong-Horng Dai and Si-Chen Lee
    Year:2007-06
Journal of Crystal Growth
Transport mechanisms and the effects of organic layer thickness on the performance of organic Schottky diodes
Chun-Yuan Huang, Shiau-Shin Cheng, Shu-Ting Chou, Chuan-Yi Yang, Tzu-Min Ou, Meng-Chyi Wu*, I-Min Chan, \"Shih-Yen Lin\", and Yi-Jen Chan
    Year:2007-06
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Influence of Thin Metal Base Thickness on the Performance of CuPc Vertical Organic Triodes
Shiau-Shin Cheng, Chuan-Yi Yang, You-Che Chuang, Chun-Wei Ou, Meng-Chyi Wu, \"Shih-Yen Lin\"* and Yi-Jen Chan
    Year:2007-04
Applied Physics Letters
Influences of Silicon Doping in Quantum Dot Layers on Optical Characteristics of InAs/GaAs Quantum Dot Infrared Photodetector
Chun-Yuan Huang, Tzu-Min Ou, Shu-Ting Chou, Cheng-Shuan Tsai, Meng-Chyi Wu*, \"Shih-Yen Lin\", Jim-Yong Chi, Bang-Yu Hsu, C.C. Chi
    Year:2007-03
THIN SOLID FILMS
All-organic hot-carrier triodes with thin-film metal base
Tzu-Min Ou, Shiau-Shin Cheng, Chun-Yuan Huang, and Meng-Chyi Wu, I-Min Chan*, \"Shih-Yen Lin\" and Yi-Jen Chan
    Year:2006-10
Applied Physics Letters
Vertical Organic Triodes with a High Current Gain Operated in Saturation Region
Chuan-Yi Yang, Tzu-Min Ou, Shiau-Shin Cheng, Meng-Chyi Wu, \"Shih-Yen Lin\"*, I-Min Chan, and Yi-Jen Chan
    Year:2006-10
Applied Physics Letters
High-Temperature Operation Normal Incident 256x256 InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array
Shiang-Feng Tang*, Cheng-Der Chiang, Ping-Kuo Weng, Yau-Tang Gau, Jihnn-Jye Ruo, San-Te Yang, Chih-Chang Shih, \"Shih-Yen Lin\" and Si-Chen Lee
    Year:2006-04
IEEE PHOTONICS TECHNOLOGY LETTERS
Influence of Doping Density on the Normal Incident Absorption of Quantum-Dot Infrared Photodetectors
Shu-Ting Chou, Meng-Chyi Wu, \"Shih-Yen Lin\"* and Jim-Yong Chi
    Year:2006-04
Applied Physics Letters
The Influence of Growth Temperature on InAs/GaAs Quantum Dots
Chun-Yuan Huang, Tzu-Min Ou, Wen-Ten Chang, Meng-Chyi Wu*, Jeng-Jung Shen, Chiou-Yue Liang, \"Shih-Yen Lin\" and Jim-Yong Chi
    Year:2005-12
Journal of Taiwan Vacuum Society
The Surface Morphology and Optical Characteristics for InAs/GaAs Quantum Dots with Different Coverag
Wen-Ten Chang, Shu-Ting Chou,Chun-Yuan Huang, Tzu-Min Ou, Meng-Chyi Wu*, Jeng-Jung Shen, \"Shih-Yen Lin\" and Jim-Yong Chi
    Year:2005-12
Journal of Taiwan Vacuum Society
Quantum-Dot Infrared Photodetectors with P-Type Doped GaAs Barrier Layers
Shu-Ting Chou, Cheng-Hsuan Tsai, Meng-Chyi Wu, \"Shih-Yen Lin\"*, and Jim-Yong Chi
    Year:2005-11
IEEE PHOTONICS TECHNOLOGY LETTERS
Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors
Chun-Yuan Huang, Tzu-Min Ou, Shu-Ting Chou, Cheng-Shuan Tsai, Meng-Chyi Wu*, \"Shih-Yen Lin\" and Jim-Yong Chi
    Year:2005-09
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
High-Performance 30-Period Quantum-Dot Infrared Photodetector
Shu-Ting Chou, \"Shih-Yen Lin\"*, Ru-Shang Hsiao, Jim-Yong Chi, Jyh-Shyang Wang, Meng-Chyi Wu and Jenn-Fang Chen
    Year:2005-06
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Device simulation for GaAs/AlGaAs superlattice infrared photodetector with a single current blocking layer
Jan-Yves Clames, \"Shih-Yen Lin\"*, Jim-Yong Chi, Shu-Ting Chou and Meng-Chyi Wu
    Year:2005-03
Journal of Applied Physics
High Responsivity Quantum-Dot Infrared Photodetector with Al0.1Ga0.9As Blocking Layers at Both Sides of the Structure
\"Shih-Yen Lin\"*, Jim-Yong Chi and Si-Chen Lee
    Year:2005-03
JOURNAL OF CRYSTAL GROWTH
MBE-grown high  gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics
W.C. Lee, Y.J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S. Maikap, L.S. Lee, W.Y. Hsieh, M.J. Tsai, \"S.Y. Lin\", T. Gustffson, M. Hong and J. Kwo*
    Year:2005-03
Journal of crystal growth
Single mode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
Hung-Pin D. Yang*, Fang-I Lai, Ya-Hsien Chang, Hsin-Chieh Yu, Chia-Pin Sung, Hao-Chung Kuo, S. C. Wang, \"Shih-Yen Lin\", and Jim Y. Chi
    Year:2005-03
ELECTRONICS LETTERS
Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1)—structure and electrical properties
C.P. Chen, M. Hong*, J. Kwo, H.M. Cheng, Y.L. Huang, \"S.Y. Lin\", J. Chi, H.Y. Lee, Y.F. Hsieh and J.P. Mannaerts
    Year:2005-03
JOURNAL OF CRYSTAL GROWTH
Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked islands under ultra-low V/III ratio
Shiang-Feng Tang*, \"Shih-Yen Lin\", San Te Yang, Cheng Der Chiang, Ya Tung Cherng, Hui Tang Shen, Tzer En Nee, Ray Ming Lin and Min Yu Hsu
    Year:2004-06
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
\"Shih-Yen Lin\", Yau-Ren Tsai and Si-Chen Lee*
    Year:2004-01
JAPANESE JOURNAL OF APPLIED PHYSICS
Transport Characteristics of InAs/GaAs Quantum-Dot Infrared Photodetectors
\"Shih-Yen Lin\", Yau-Ren Tsai and Si-Chen Lee*
    Year:2003-07
APPLIED PHYSICS LETTERS
InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) With Double Al0.3Ga0.7As Blocking Barriers
Shiang-Feng Tang, \"Shih-Yen Lin\", and Si-Chen Lee*
    Year:2002-08
IEEE TRANSACTIONS ON ELECTRON DEVICES
Integral and fractional charge filling in a InAs/GaAs quantum dot p–i–n diode by capacitance–voltage measurement
Shiang-Feng Tang, \"Shih-Yen Lin\", Si-Chen Lee* and Ya-Tung Cherng
    Year:2002-02
JOURNAL OF APPLIED PHYSICS
Structural and Optical Properties of Germanium Nanoparticles
Chung-Wei Lin, \"S. Y. Lin\" and S. C. Lee*
    Year:2002-02
JOURNAL OF APPLIED PHYSICS
Structural and Optical Properties of Silicon-Germanium Nanoparticles
Chung-Wei Lin, \"S. Y. Lin\" and S. C. Lee*
    Year:2002-02
JOURNAL OF APPLIED PHYSICS
The Comparison of InAs/GaAs Quantum Dot Infrared photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector
\"Shih-Yen Lin\", Yau-Ren Tsai and Si-Chen Lee*
    Year:2001-12
JAPANESE JOURNAL OF APPLIED PHYSICS
InAs Quantum Dots on (001) GaAs Substrate with Two Groups of Different Sizes under Arsenic Shutter Closed Condition
S. F. Tang, \"S. Y. Lin\" and S. C. Lee*
    Year:2001-08
JOURNAL OF NANOPARTICLE RESEARCH
High-Performance InAs/GaAs Quantum-Dot Infrared Photodetector with Single-sided Al0.3Ga0.7As Blocking Layer
\"Shih-Yen Lin\", Yau-Ren Tsai and Si-Chen Lee*
    Year:2001-04
APPLIED PHYSICS LETTERS
Near-Room Temperature Operation of InAs/GaAs Quantum Dot Infrared Photodetector
Shiang-Feng Tang, \"Shih-Yen Lin\" and Si-Chen Lee*
    Year:2001-04
APPLIED PHYSICS LETTERS
Spherical quantum dots prepared by thermal evaporation
Yu-Cheng Liao, \"Shih-Yen Lin\", Si-Chen Lee* and Chih-Ta Chia
    Year:2000-12
APPLIED PHYSICS LETTERS