Yu-Chen Chen 陳俞辰
Assistant Research Fellow

Ways to contact me：

E-mail:ycchen74gate.sinica.edu.tw
Phone:02-2787-3177
Fax:
Address: Research Center for Applied Sciences, Academia Sinica
128 Academia Road, Section 2, Nankang, Taipei 115-29, Taiwan R.O.C
中央研究院應用科學研究中心
台北市11529南港區研究院路二段128號

Education：

Experience：

Research Fields：

  • Fabrication and femtosecond laser writing of spin defects in wide band gap materials.

  • Manipulation of the spin states.

  • Quantum optics.

Recent Publications：

  1. N. Chejanovsky†, A. Mukherjee†*, J. Geng†, Y. C. Chen†, Y. Kim, A. Denisenko, A. Finkler, T. Taniguchi, K. Watanabe, D. B. R. Dasari*, P. Auburger, A. Gali, J. H. Smet, and J. Wrachtrup. Single-spin resonance in a van der Waals embedded paramagnetic defect. Nature Materials, 20, 1079-1084 (2021).
    [ DOI:10.1038/s41563-021-00979-4 ]

  2. M. Niethammer*, M. Widmann, T. Rendler, N. Morioka, Y. C. Chen, R. Stöhr, J. Ul Hassan, S. Onoda, T. Ohshima, S. Y. Lee, A. Mukherjee, J. Isoya, N. T. Son, and J. Wrachtrup. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions. Nat. Commun. 10, 5569 (2019).
    [ DOI:10.1038/s41467-019-13545-z ]

  3. C. J. Stephen, B. L. Green, Y. N. D. Lekhai, L. Weng, P. Hill, S. Johnson, A. C. Frangeskou, P. L. Diggle, Y.-C. Chen, M. J. Strain, E. Gu, M. E. Newton, J. M. Smith, P. S. Salter, and G. W. Morley. Deep three-dimensional solid-state qubit arrays with long-lived spin coherence. Phys. Rev. Applied. 12, 064005 (2019).
    [ DOI:10.1103/PhysRevApplied.12.064005 ]

  4. M. Widmann*, M. Niethammer, D. Y. Fedyanin, I. A. Khramtsov, T. Rendler, I. D. Booker, J. Ul Hassan, N. Morioka, Y. C. Chen, I. G. Ivanov, N. T. Son, T. Ohshima, M. Bockstedte, A. Gali, C. Bonato, S. Y. Lee*, and J. Wrachtrup. Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. Nano Lett. 19, 10, 7173-7180 (2019).
    [ DOI:10.1021/acs.nanolett.9b02774 ]

  5. Y. C. Chen, B. Griffiths, L. Weng, S. S. Nicley, S. N. Ishmael, Y. Lekhai, S. Johnson, C. J. Stephen, B. L. Green, G. W. Morley, M. E. Newton, M. J. Booth, P. S. Salter, and J. M. Smith*. Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield. Optica. 6, 5, 662-667 (2019).
    [ DOI:10.1364/OPTICA.6.000662 ]

  6. R. Nagy, M. Niethammer, M. Widmann, Y. C. Chen, P. Udvarhelyi, C. Bonato, J. Ul Hassan, R. Karhu, I. G. Ivanov, N. T. Son, J. R. Maze, T. Ohshima, O. O. Soykal, A. Gali, S. Y. Lee*, F. Kaiser*, and J. Wrachtrup. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nature Communications. 10, 1954 (2019).
    [ DOI:10.1038/s41467-019-09873-9 ]

  7. Y. C. Chen*, P. S. Salter, M. Niethammer, M. Widmann, F. Kaiser, R. Nagy, N. Morioka, C. Babin, J. Erlekampf, P. Berwian, M. J. Booth, and J. Wrachtrup. Laser writing of scalable single color centers in silicon carbide. Nano Lett. 19, 4, 2377-2383 (2019).
    [ DOI:10.1021/acs.nanolett.8b05070 ]

  8. P. R. Dolan, S. Adekanye, A. A. P. Trichet, S. Johnson, L. C. Flatten, Y. C. Chen, L. Weng, D. Hunger, H.-C. Chang, S. Castelletto, and J. M. Smith*. Robust, tunable, and high purity triggered single photon source at room temperature using a nitrogen-vacancy defect in diamond in an open microcavity. Optics Express. 26, 6, 7056-7065 (2018).
    [ DOI:10.1364/OE.26.007056 ]

  9. Y. C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth and J. M. Smith*. Laser writing of coherent colour centres in diamond. Nature Photonics, 11, 77–80 (2017).
    [ DOI:10.1038/nphoton.2016.234 ]

  10. S. Johnson, P. R. Dolan, T. Grange, A. A. P. Trichet, G. Hornecker, Y. C. Chen, L. Weng, G. M. Hughes, A. A. R. Watt, A. Auffeves and J. M. Smith*. Tunable cavity coupling of the zero phonon line of a nitrogen-vacancy defect in diamond. New J. Phys, 17, 122003 (2015).
    [ DOI:10.1088/1367-2630/17/12/122003 ]

Patents：

  1. Method to trapping vacancies in a crystal lattice (US patent No. US10934635B2)