EBL ELS BODEN-100

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Overview
facilities

Key Features:

  • Acceleration Voltage: 100 kV
  • Exposure Current: 20 pA - 100 nA
  • Scanning Rate: 200 MHz
  • Vacuum: ≤ 4 × 10-4 Pa
  • Electron Beam Spot Size: φ 1.8 nm
  • Minimum Line Width: 6 nm
  • Writing Field Size: 100 µm、250 µm、500 µm、1000 µm (at standard field)
  • Scanner Resolution: 0.2 nm
  • Max. Writing Area: X ≤ 210 mm, Y ≤ 210 mm
  • Max. Sample Size: 8" (200mm) wafer
Usage
  1. Self-operation
  2. Original Equipment Manufacturer (OEM)
Application process
  1. Pass the laboratory safety education for new colleagues of the Academia Sinica.
  2. Read the introduction, application process and management methods by yourself.
  3. After submitting the application form, the administrator will conduct machine training.
  4. Only after passing the assessment can you get access control and machine permissions; those who fail can apply for re-assessment one month later.
File downloads
Usage regulations Application form OEM Application Form
Charge standard
※minimum training times: three times, totaling six hours
National academic institutions National non-academic institutions
Self-operation NTD 1,500/h -
OEM NTD 3,000/h NTD 5,000/h
Training NTD 1,500/h NTD 5,000/h
Reservation
If you have research results produced using ELS BODEN-100 managed by this center, please add a note in the paper: The fabrication work for this study was supported by the core facilities of the Center for Applied Sciences (RCAS), Academia Sinica, under project No. AS-CFI-113-A10.
Contact: Mr. Jia Wern Chen
Mail jwchen1123as.edu.tw
call 02-27873192
Manager: Dr. Shu-Yi Hsieh
Mail shuyihsiehas.edu.tw
call 02-27873147