Narrative CV

陳俞辰助研究員，他的專長是研究單個自旋缺陷量子特性與其量子應用。他主要的研究興趣為製作寬能隙材料中的單個自旋缺陷並量測其量子特性，例如鑽石或碳化矽。他在國立清華大學取得碩士學位，之後於英國的牛津大學取得他的博士學位。

他開發了使用飛秒脈衝雷射在鑽石中生成單一個Nitrogen-vacancy量子缺陷，並且此方法被證明可以在基質材料中產生最少量的缺陷。因此，雷射生成的Nitrogen-vacancy的自旋與光學同調性可以達到其物理極限。並且，他也證明雷射寫入方法可以用於生其他量子缺陷，例如碳化矽中的silicon vacancy。

他的未來研究方向主要聚焦於兩個主題。第一個主題是在具工業規模製作光子結構的材料中尋找新的自旋量子缺陷，例如二氧化矽或是氮化矽。如此一來，就可以把量子缺陷耦合進on-chip光子元件，進而達成可擴展的量子元件。第二個主題是聚焦於製作高品質的具通訊波段螢光的自旋量子缺陷。此種量子缺陷在量子通訊應用上具有極大的潛力。

Education

• 2013 - 2017, Ph.D. in Materials science, University of Oxford
• 2009 - 2010, M.S. in Physics, National Tsing Hua University

Positions and Career

• 中央研究院應用科學研究中心助研究員 (2022-)
• 中央研究院應用科學研究中心博士後研究員 (2021-2022)
• 司徒加特大學3^rd Institute of Physics博士後研究員 (2018-2020)

Honors and Awards

• 2013-2016 De Beers博士學程獎學金

Selected Publications

• N. Chejanovsky, A. Mukherjee*, J. Geng, Y. C. Chen, Y. Kim, A. Denisenko. A. Finkler, T. Taniguchi, K. Watanabe, D. B. R. Dasari*. P. Auburger, A. Gali, J. H. Smet, and J. Wrachtrup. Single-spin resonance in a van der Waals embedded paramagnetic defect. Nature Materials 20, 1079-1084 (2021).
• M. Niethammer*, M. Widmann, T. Rendler, N. Morioka, Y. C. Chen, R. Stöhr, J. Ul Hassan, S. Onoda, T. Ohshima, S. Y. Lee, A. Mukherjee, J. Isoya, N. T. Son, and J. Wrachtrup. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions. Nature Communications 10, 5569 (2019).
• C. J. Stephen, B. L. Green, Y. N. D. Lekhai, L. Weng, P. Hill, S. Johnson, A. C. Frangeskou, P. L. Diggle, Y.-C. Chen, J. Strain, E. Gu, M. E. Newton, J. M. Smith, P. S. Slater, and G. W. Morley*. Deep three-dimensional solid-state qubit arrays with long-live spin coherence. Physical Review Applied 12, 064005 (2019).
• M. Widmann*, M. Niethammer, D. Y. Fedyanin, I. A. Khramtsov, T. Rendler, I. D. Booker, J. Ul Hassan, N. Marioka, Y. C. Chen, I. G. Ivanov, N. T. Son, T. Ohshima, M. Bockstedte, A. Gali, C. Bonato, S. Y. Lee*, and J. Wrachtrup. Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. Nano Letters 19, 10, 7173-7180 (2019).
• Y. C. Chen, B. Griffiths, L. Weng, S. S. Nicley, S. N. Ishmael, Y. Lekhai, S. Johnson, C. J. Stephen, B. L. Green, G. W. Morley, M. E. Newton, M. J. Booth, P. S. Salter, and J. M. Smith*. Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield. Optica 6, 5, 662-667 (2019).
• R. Nagy, M. Niethammer, M. Widmann, Y. C. Chen, P. Udyarhelyi, C. Bonato, J. Ul Hassan, R. Karhu, I. G. Ivanov, N. T. Son, J. R. Maze, T. Ohshima, O. O. Soykal, A. Gali, S. Y. Lee*, F. Kaiser*, and J. Wrachtrup. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nature Communications 10, 1954 (2019).
• Y. C. Chen*, P. S. Salter, M. Niethammer, M. Widmann, F. Kaiser, R. Nagy, N. Marioka, C. Babin, J. Erlekampf, P. Berwian, M. J. Booth, and J. Wrachtrup. Laser writing of scalable single color centers in silicon carbide. Nano Letters 19, 4, 2377-2383 (2019).
• P. R. Dolan, S. Adekanye, A. A. P. Trichet, S. Johnson, L. C. Flatten, Y. C. Chen, L. Weng, D. Hunger, H.-C. Chang, S. Castelletto, and J. M. Smith*. Robust, tunable, and high purity triggered single photon source at room temperature using a nitrogen-vacancy defect in diamond in an open microcavity. Optics Express 26, 6, 7056-7065 (2018).
• Y. C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith*. Laser writing of coherent colour centres in diamond. Nature Photonics 11, 77-80 (2017).

• Y. C. Chen, S. C. Lin, J. P. Chou, Y. C. Tsai, C. T. Huang, C. J. Lee, W. H. Chang. Stable Single Photon Emitters with Large Debye–Waller Factor in Silica. ACS Photonics 12, 3, 1461–1469 (2025).
• N. Chejanovsky, A. Mukherjee*, J. Geng, Y. C. Chen, Y. Kim, A. Denisenko. A. Finkler, T. Taniguchi, K. Watanabe, D. B. R. Dasari*. P. Auburger, A. Gali, J. H. Smet, and J. Wrachtrup. Single-spin resonance in a van der Waals embedded paramagnetic defect. Nature Materials 20, 1079-1084 (2021).
• M. Niethammer*, M. Widmann, T. Rendler, N. Morioka, Y. C. Chen, R. Stöhr, J. Ul Hassan, S. Onoda, T. Ohshima, S. Y. Lee, A. Mukherjee, J. Isoya, N. T. Son, and J. Wrachtrup. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions. Nature Communications 10, 5569 (2019).
• C. J. Stephen, B. L. Green, Y. N. D. Lekhai, L. Weng, P. Hill, S. Johnson, A. C. Frangeskou, P. L. Diggle, Y. C. Chen, J. Strain, E. Gu, M. E. Newton, J. M. Smith, P. S. Slater, and G. W. Morley*. Deep three-dimensional solid-state qubit arrays with long-live spin coherence. Physical Review Applied 12, 064005 (2019).
• M. Widmann*, M. Niethammer, D. Y. Fedyanin, I. A. Khramtsov, T. Rendler, I. D. Booker, J. Ul Hassan, N. Marioka, Y. C. Chen, I. G. Ivanov, N. T. Son, T. Ohshima, M. Bockstedte, A. Gali, C. Bonato, S. Y. Lee*, and J. Wrachtrup. Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. Nano Letters 19, 10, 7173-7180 (2019).